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preliminary SKA06N60 1 apr-00 fast s-igbt in npt-technology with soft, fast recovery anti-parallel emcon diode g c e ? 75% lower e off compared to previous generation combined with low conduction losses ? short circuit withstand time ? 10 s ? designed for: - motor controls - inverter ? npt-technology for 600v applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability ? very soft, fast recovery anti-parallel emcon diode ? isolated to-220, 2.5kv, 60s to-220-3-31 type v ce i c v ce(sat ) t j package ordering code SKA06N60 600v 5a 2.3v 150 c to-220-3-31 q67040-s4340 maximum ratings parameter symbol value unit collector-emitter voltage v ce 600 v dc collector current t c = 25 c t c = 100 c i c 9.0 5.0 pulsed collector current, t p limited by t jmax i cpuls 24 turn off safe operating area v ce 600v, t j 150 c - 24 diode forward current t c = 25 c t c = 100 c i f 12 6 diode pulsed current, t p limited by t jmax i fpuls 24 a gate-emitter voltage v ge 20 v short circuit withstand time 1) v ge = 15v, v cc 600v, t j 150 c t sc 10 s power dissipation t c = 25 c p tot 32 w operating junction and storage temperature t j , t stg -55...+150 c 1) allowed number of short circuits: <1000; time between short circuits: >1s.
preliminary SKA06N60 2 apr-00 thermal resistance parameter symbol conditions max. value unit characteristic igbt thermal resistance, junction ? case r thjc 3.80 diode thermal resistance, junction ? case r thjcd 5.0 thermal resistance, junction ? ambient r thja to-220-3-31 65 k/w electrical characteristic, at t j = 25 c, unless otherwise specified value parameter symbol conditions min. typ. max. unit static characteristic collector-emitter breakdown voltage v (br)ces v ge =0v, i c =500 a 600 - - collector-emitter saturation voltage v ce(sat) v ge = 15v, i c =6a t j =25 c t j =150 c 1.7 - 2.0 2.3 2.4 2.8 diode forward voltage v f v ge =0v, i f =6a t j =25 c t j =150 c 1.2 - 1.4 1.25 1.8 1.65 gate-emitter threshold voltage v ge(th) i c =250 a, v ce = v ge 345 v zero gate voltage collector current i ces v ce =600v, v ge =0v t j =25 c t j =150 c - - - - 20 700 a gate-emitter leakage current i ges v ce =0v, v ge =20v - - 100 na transconductance g fs v ce =20v, i c =6a -4.2-s dynamic characteristic input capacitance c iss - 350 420 output capacitance c oss -3846 reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz -2328 pf gate charge q gate v cc =480v, i c =6a v ge =15v -3242nc internal emitter inductance measured 5mm (0.197 in.) from case l e to-220-3-31 - 7 - nh short circuit collector current 2) i c(sc) v ge =15v, t sc 10 s v cc 600v, t j 150 c -60-a 2) allowed number of short circuits: <1000; time between short circuits: >1s.
preliminary SKA06N60 3 apr-00 switching characteristic, inductive load, at t j =25 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) -2530 rise time t r -1822 turn-off delay time t d(off) - 220 264 fall time t f -5465 ns turn-on energy e on - 0.110 0.127 turn-off energy e off - 0.105 0.137 total switching energy e ts t j =25 c, v cc =400v, i c =6a, v ge =0/15v, r g =50 ? , energy losses include ? tail ? and diode reverse recovery. - 0.215 0.263 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 200 17 183 - - - ns diode reverse recovery charge q rr - 200 - nc diode peak reverse recovery current i rrm -2.8-a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =25 c, v r =200v, i f =6a, di f /dt =200a/ s - 180 - a/ s switching characteristic, inductive load, at t j =150 c value parameter symbol conditions min. typ. max. unit igbt characteristic turn-on delay time t d(on) -2429 rise time t r -1720 turn-off delay time t d(off) - 248 298 fall time t f -7084 ns turn-on energy e on - 0.167 0.192 turn-off energy e off - 0.153 0.199 total switching energy e ts t j =150 c v cc =400v, i c =6a, v ge =0/15v, r g =50 ? energy losses include ? tail ? and diode reverse recovery. - 0.320 0.391 mj anti-parallel diode characteristic diode reverse recovery time t rr t s t f - - - 290 27 263 - - - ns diode reverse recovery charge q rr - 500 - nc diode peak reverse recovery current i rrm -5.0-a diode peak rate of fall of reverse recovery current during t b di rr /dt t j =150 c v r =200v, i f =6a, di f /dt =200a/ s - 200 - a/ s
preliminary SKA06N60 4 apr-00 i c , collector current 10hz 100hz 1khz 10khz 100khz 0a 10a 20a 30a t c =110 c t c =80 c i c , collector current 1v 10v 100v 1000v 0.1a 1a 10a t p =2 s 15 s 50 s dc 1ms 200 s f , switching frequency v ce , collector - emitter voltage figure 1. collector current as a function of switching frequency ( t j 150 c, d = 0.5, v ce = 400v, v ge = 0/+15v, r g = 50 ? ) figure 2. safe operating area ( d = 0, t c = 25 c, t j 150 c) p tot , power dissipation 25 c50 c75 c 100 c 125 c 0w 10w 20w 30w 40w i c , collector current 25 c50 c75 c100 c 125 c 0a 5a 10a t c , case temperature t c , case temperature figure 3. power dissipation as a function of case temperature ( t j 150 c) figure 4. collector current as a function of case temperature ( v ge 15v, t j 150 c) i c i c
preliminary SKA06N60 5 apr-00 i c , collector current 0v 1v 2v 3v 4v 5v 0a 5a 10a 15a 20a 15v 13v 11v 9v 7v 5v v ge =20v i c , collector current 0v 1v 2v 3v 4v 5v 0a 5a 10a 15a 20a 15v 13v 11v 9v 7v 5v v ge =20v v ce , collector - emitter voltage v ce , collector - emitter voltage figure 5. typical output characteristics ( t j = 25 c) figure 6. typical output characteristics ( t j = 150 c) i c , collector current 0v 2v 4v 6v 8v 10v 0a 2a 4a 6a 8a 10a 12a 14a 16a 18a 20a -55 c +150 c t j =+25 c v ce(sat) , collector - emitter saturation voltage -50 c0 c50 c 100 c150 c 1.0v 1.5v 2.0v 2.5v 3.0v 3.5v 4.0v v ge , gate - emitter voltage t j , junction temperature figure 7. typical transfer characteristics ( v ce = 10v) figure 8. typical collector-emitter saturation voltage as a function of junction temperature ( v ge = 15v) i c = 6a i c = 12a
preliminary SKA06N60 6 apr-00 t , switching times 0a 3a 6a 9a 12a 15a 10ns 100ns t r t d(on) t f t d(off) t , switching times 0 ? 50 ? 100 ? 150 ? 10ns 100ns t r t d(on) t f t d(off) i c , collector current r g , gate resistor figure 9. typical switching times as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 50 ? ) figure 10. typical switching times as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 6a) t , switching times 0 c50 c 100 c150 c 10ns 100ns t r t d(on) t f t d(off) v ge(th) , gate - emitter threshold voltage -50 c0 c50 c100 c150 c 2.0v 2.5v 3.0v 3.5v 4.0v 4.5v 5.0v 5.5v typ. min. max. t j , junction temperature t j , junction temperature figure 11. typical switching times as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 6a, r g = 50 ? ) figure 12. gate-emitter threshold voltage as a function of junction temperature ( i c = 0.25ma)
preliminary SKA06N60 7 apr-00 e , switching energy losses 0a 3a 6a 9a 12a 15a 0.0mj 0.2mj 0.4mj 0.6mj 0.8mj e on * e off e ts * e , switching energy losses 0 ? 50 ? 100 ? 150 ? 0.0mj 0.2mj 0.4mj 0.6mj e ts * e on * e off i c , collector current r g , gate resistor figure 13. typical switching energy losses as a function of collector current (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, r g = 50 ? ) figure 14. typical switching energy losses as a function of gate resistor (inductive load, t j = 150 c, v ce = 400v, v ge = 0/+15v, i c = 6a) e , switching energy losses 0 c50 c100 c 150 c 0.0mj 0.1mj 0.2mj 0.3mj 0.4mj e ts * e on * e off z thjc , transient thermal impedance 1s 10s 100s 1ms 10ms 100ms 1s 10s 10 -3 k/w 10 -2 k/w 10 -1 k/w 10 0 k/w 10 1 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t j , junction temperature t p , pulse width figure 15. typical switching energy losses as a function of junction temperature (inductive load, v ce = 400v, v ge = 0/+15v, i c = 6a, r g = 50 ? ) figure 16. igbt transient thermal impedance as a function of pulse width ( d = t p / t ) *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. *) e on and e ts include losses due to diode recovery. c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 2.73 1.83 0.395 2.93*10 -2 0.353 2.46*10 -3 0.323 3.45*10 -4
preliminary SKA06N60 8 apr-00 v ge , gate - emitter voltage 0nc 15nc 30nc 45nc 0v 5v 10v 15v 20v 25v 480v 120v c , capacitance 0v 10v 20v 30v 10pf 100pf 1nf c rss c oss c iss q ge , gate charge v ce , collector - emitter voltage figure 17. typical gate charge ( i c = 6a) figure 18. typical capacitance as a function of collector-emitter voltage ( v ge = 0v, f = 1mhz) t sc , short circuit withstand time 10v 11v 12v 13v 14v 15v 0 s 5 s 10 s 15 s 20 s 25 i c(sc) , short circuit collector current 10v 12v 14v 16v 18v 20v 0a 20a 40a 60a 80a 100a v ge , gate - emitter voltage v ge , gate - emitter voltage figure 19. short circuit withstand time as a function of gate-emitter voltage ( v ce = 600v, start at t j = 25 c) figure 20. typical short circuit collector current as a function of gate-emitter voltage ( v ce 600v, t j = 150 c)
preliminary SKA06N60 9 apr-00 t rr , reverse recovery time 50a/ s150a/ s250a/ s350a/ s450a/ s550a/ s 0ns 100ns 200ns 300ns 400ns 500ns i f = 3a i f = 6a i f = 12a q rr , reverse recovery charge 50a/ s150a/ s250a/ s350a/ s450a/ s 550a/ s 0nc 200nc 400nc 600nc 800nc 1000nc i f = 3a i f = 6a i f = 12a di f /dt , diode current slope di f /dt , diode current slope figure 21. typical reverse recovery time as a function of diode current slope ( v r = 200v, t j = 125 c) figure 22. typical reverse recovery charge as a function of diode current slope ( v r = 200v, t j = 125 c) i rr , reverse recovery current 50a/ s150a/ s 250a/ s350a/ s450a/ s550a/ s 0a 2a 4a 6a 8a 10a 12a i f = 3a i f = 12a i f = 6a di rr /d t , diode peak rate of fall of reverse recovery current 50a/ s 150a/ s 250a/ s 350a/ s 450a/ s550a/ s 0a/ s 100a/ s 200a/ s 300a/ s 400a/ s 500a/ s 600a/ s di f /dt , diode current slope di f /dt , diode current slope figure 23. typical reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c) figure 24. typical diode peak rate of fall of reverse recovery current as a function of diode current slope ( v r = 200v, t j = 125 c)
preliminary SKA06N60 10 apr-00 i f , forward current 0.0v 0.5v 1.0v 1.5v 2.0v 0a 2a 4a 6a 8a 10a 12a 100 c -55 c 25 c 150 c v f , forward voltage -40 c0 c40 c80 c 120 c 1.0v 1.5v 2.0v v f , forward voltage t j , junction temperature figure 25. typical diode forward current as a function of forward voltage figure 26. typical diode forward voltage as a function of junction temperature z thjcd , transient thermal impedance 10s 100s 1ms 10ms 100ms 1s 10 s 10 -2 k/w 10 -1 k/w 10 0 k/w 10 1 k/w 0.01 0.02 0.05 0.1 0.2 single pulse d =0.5 t p , pulse width figure 27. diode transient thermal impedance as a function of pulse width ( d = t p / t ) i f = 6a i f = 12a c 1 = r 1 r 1 r 2 c 2 = r 2 r ,(k/w) , (s) 2.852 1.887 0.654 4.64*10 -2 0.665 2.88*10 -3 0.828 3.83*10 -4
preliminary SKA06N60 11 apr-00 dimensions symbol [mm] [inch] min max min max a 10.37 10.63 0.4084 0.4184 b 15.86 16.12 0.6245 0.6345 c 0.65 0.78 0.0256 0.0306 d 2.95 typ. 0.1160 typ. e 3.15 3.25 0.124 0.128 f 6.05 6.56 0.2384 0.2584 g 13.47 13.73 0.5304 0.5404 h 3.18 3.43 0.125 0.135 k 0.45 0.63 0.0177 0.0247 l 1.23 1.36 0.0484 0.0534 m 2.54 typ. 0.100 typ. n 4.57 4.83 0.1800 0.1900 p 2.57 2.83 0.1013 0.1113 t 2.51 2.62 0.0990 0.1030 p-to220-3-31
preliminary SKA06N60 12 apr-00 figure a. definition of switching times i rrm 90% i rrm 10% i rrm di /dt f t rr i f i , v t q s q f t s t f v r di /dt rr q=q q rr s f + t=t t rr s f + figure c. definition of diodes switching characteristics p(t) 12 n t (t) j figure d. thermal equivalent circuit figure b. definition of switching losses
preliminary SKA06N60 13 apr-00 published by infineon technologies ag , bereich kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 2000 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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